Semiconductor die attachment for high vacuum tubes

ABSTRACT

There is described novel bonding and interconnect techniques including a spacer for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the novel tube resulting therefrom.

This application is a continuation in part of a previously filed application now pending in the U.S. Patent Office as Ser. No. 10/846,060, filed May 14, 2004, having the same title as this application.

FIELD OF THE INVENTION

The present invention is directed to the manufacture of improved vacuum devices or tubes through the use of efficient and physically compliant attachment and interconnect techniques for semiconductor die and/or semiconductor die assemblies in ultra high vacuum tubes, particularly where planar parallel spacing of tube elements is required.

BACKGROUND OF THE INVENTION

The present invention teaches a vacuum-compatible die bonding technique suitable for mounting die within a vacuum housing for use in a ultra high vacuum (UHV) tube. It also teaches a method by which the disclosed die bond structure can generate precisely aligned planar structures such as photocathodes and CMOS anodes. An application where this invention is particularly valuable is when used with charge coupled devices (CCDS) or CMOS in a vacuum environment in which the semiconductor die (CCD or CMOS) is directly electron bombarded in an imaging system as, for example, as is disclosed in U.S. Pat. No. 4,687,922 (CCDs) or as disclosed in U.S. Pat. No. 6,285,018 B1 (CMOS). This invention is also applicable for attaching hybrid read out integrated circuit devices (ROIC) to thermally mismatched substrates such as ceramics within photocathode based vacuum tubes.

In the prior art, as described for example in U.S. Pat. No. 6,281,572, an intermediate pedestal is used between mismatched materials. The pedestal makes use of both an intermediate thermal coefficient of expansion (TCE) and a restricted area in order to limit the TCE mismatch induced strain in the finished device. The induced strain in the finished device is roughly proportional to the TCE mismatch times the change in temperature from the point at which the braze material solidified times the linear dimension of the braze. In the prior art, a braze material was chosen that remained in it's solid form throughout the tube vacuum process cycle. Typical braze materials and melting temperatures included AuSn (˜280° C.) and AuGe (˜361° C.) alloys. Modern photocathode based sensors including semiconductor devices are typically sealed under ultra-high vacuum (UHV) conditions. In order to achieve these conditions, tube components are typically baked at temperatures in excess of 200° C. in vacuum to eliminate residual gasses from tube components. Typically, the brazes are aligned using fixtures in order to accurately set the position of the semiconductor device within the tube. The fixtures are later removed and the tube is run through a UHV seal cycle. The high temperature of the braze alloys is required in the prior art to insure that the semiconductor does not move during the vacuum sealing step. The downside of the high temperature braze is that it locks in a high degree of strain in the finished assembly when it is cooled to room temperature. Another approach used in the prior art is to simply minimize the maximum linear dimension of the braze pad in order to minimize strain. A 0.050″ braze pad has been shown to work reasonably well with an AuSn braze. U.S. Pat. No. 6,507,147 describes a prior art package suitable for UHV applications that makes use of a small area braze. There is however a downside to this approach too. The use of a small pad limits the heat transfer area between the semiconductor device and the underlying substrate. In the case of electron bombarded CMOS image sensors or ROIC based CMOS anodes, heating of the sensor resulting from dissipation in the chip can and generally will result in degraded sensor performance. These difficulties in the prior art are avoided and/or considerably reduced through the use of physically compliant vacuum-compatible die bonding techniques enabling the efficient mounting of die within the vacuum area in a UHV tube.

In prior art UHV tubes such as the one described in U.S. Pat. No. 6,281,572, electrical connection between the semiconductor device and the inside of the vacuum envelope has been made through the use of wire-bonds that extend from the exposed surface of the semiconductor die to the underlying surface of the vacuum package. The use of wire-bonds is a well-established, reliable way to make multiple electrical connections between a semiconductor device and a thermal coefficient of expansion mismatched package. The down side of this approach is the additional package volume dedicated to the annular ring of pads that lie outside the projected outline of the overlying semiconductor die. Through the use of low melting point physically compliant braze materials, the connection pads can be moved below the semiconductor die, thereby conserving package volume and projected area.

The accuracy and repeatability of the anode braze specifies the flatness of the die within the vacuum envelope. The flatness and accuracy of placement of the die within the package in the prior art affects the cathode to anode gap and consequently sensor performance. In the case of image intensifiers employing micro-channel plates, the issue of gap control has been addressed through the use of a physical spacer between the cathode and the next tube element, the micro-channel plate (MCP). In U.S. Pat. No. 6,847,027, losue describes a method to affix a spacer to a photocathode. The spacer is then driven into the next sensor element, in this case the MCP, as the cold weld is affected between the photocathode assembly and the vacuum envelope. losue does not detail the deflection of the internal geometry of the MCP caused by the cathode contact. However, from losue's drawings it appears that the MCP will deform in response to force applied by the photocathode. MCPs are thin and, within limits, fairly flexible elements. Consequently, when supported only at the edge they can deform by a few mils thereby affecting an alignment with the photocathode, without breaking. Although this approach works reasonably well for image intensifiers, where the MCP is only supported at its edge, the forces involved would result in significant internal damage if attempted on devices that present a braze supported surface such as an electron bombarded active pixel sensors (EBAPS). Another shortcoming in losue is that the mechanism to space the MCPs and the photocathode, does not, assure that the surface of the MCP and the surface of the output window are positioned as close as possible and in a parallel relationship. Although great care and elaborate fixturing are used to achieve uniform input and output gap spacing, tolerances inevitably lead to non-uniformities. Without uniformity, the created output image quality will change as a function of position.

SUMMARY OF THE INVENTION

The present invention minimizes or does away with the drawbacks of the prior art and in those instances in which a pedestal would have been used, eliminates this costly element. The present invention makes use of indium (melting point ˜156° C.) or other low melting point (less than about 200° C.) metals or alloys of metals, that remain ductile over the anticipated useful temperature range during processing of the vacuum tube, to bond the semiconductor device to the underlying substrate. The choice of a low melting point bonding material means that the material will re-melt during vacuum processing of the tube. Pads are typically used as an intermediate between the semiconductor device or other substrate and the braze material, in order to specify the braze geometry and control the metallurgy of the braze. The re-melt issue is addressed in one of two ways. The first approach is to use a small centrally located pad (˜0.050″ max. linear dimension) on which a conventional braze material is used surrounded by a pad or pads on which a low melting point braze material is used. The second, and the preferred approach, is to generate an array of small, preferably round pads in a matching pattern on the semiconductor device and the underlying substrate. Through a suitable choice of pad, metallurgy, geometry, number, and braze material volume, the die will remain suitably aligned within the tube when the vacuum processes cause the braze material to melt, by virtue of the aligning force generated by the surface tension of the braze material. In fact, the described approach has lead to better reproducibility in the positioning of semiconductor devices and better flatness than that achieved by prior techniques used in this field. The surface tension generated force has been shown to be sufficient to support the die, without significant position shift, in an inverted position while in a fully molten state. Furthermore, experience has shown that larger linear dimensions can be used with an indium braze as described than would be predicted by simple scaling of AuSn braze results. This may be explained by the fact that the indium remains ductile and thereby may relieve some of the residual strain induced by the TCE mismatch. The use of multiple small pads can also be used to address heat transfer issues between the die and underlying substrate. Although each individual braze may be small, the brazes can be tightly packed so as to cover a large fraction of the full die area thereby facilitating efficient heat transfer. This approach has been shown to be effective for die in excess of 2 cm square.

Electrical connections to semiconductor devices can also be achieved through the use of suitable metallurgy. The technique accommodates significant thermal coefficient of expansion mismatch and has been demonstrated to be reliable through multiple thermal cycles between room temperature and that of atmospheric pressure liquid nitrogen. The technique has the further major benefit for proximity-focused tubes that, unlike wire bonding, the new contacting scheme is effectively planar on the exposed surface. This allows the overlying tube wall to be moved closer to the semiconductor device surface without excessive yield losses. This in turn results in higher performance image sensors. This is particularly true for proximity focused vacuum image sensors where the semiconductor device is a CCD or CMOS imager. In this case, cathode-semiconductor gap or MCP-semiconductor gap directly affects imager resolution and a performance parameter called “Halo”. Tube gaps are typically limited by the peak electric field present between the two biased planes of the tube, typically a photocathode or micro-channel plate (MCP) on the negative polarity side and the semiconductor device on the positive side. The design gap can be estimated by adding the gap that creates the maximal design electric field to the height of any projections above the plane of the semiconductor device plus the parallelism tolerance of the package including that of the anode braze. For example, if one were to design for a maximum electric field of 200 V/mil and a 1000 V potential drop, the maximal electric field design gap would be 5 mils. Typical wire bonds extend above the plane of the anode by approximately 3 mils. Typical parallelism tolerances for fixtured brazes are ˜2 mils. Consequently, a ˜10 mil design gap is required in order to achieve a high production yield. However, in considering the semiconductor die bonded down as taught by this invention, the maximal field remains the same so we start with a 5 mil gap. Protrusion above the plane of the anode is <<1 mil. Parallelism tolerances have been demonstrated to be <0.5 mils. Consequently, the design gap for high yield production drops to ˜5.5 mils. This is a first order change that results in greatly improved resolution and as well as improvements in the Halo effect. Thus the present invention contributes to higher performance proximity focused tubes with the likelihood of improved resolution for such tubes.

Similar electrical interconnect approaches have been investigated by the integrated circuit industry for use with flip-chip packaging and ball grid arrays (BGAs); however, the techniques developed for use with BGAs make use of organic materials. U.S. Pat. No. 6,656,768 describes a BGA packing approach. Organics make their way into the process in a number of ways: as a solder paste binder, as a soldering flux and finally as an under-fill material to enhance the mechanical and thermal performance of the finished device. However, organics cannot be used in a UHV processing environment since the photocathode of the vacuum tube for which this invention is intended suffers as a result of the use of organics in these roles. Organics have a tendency to break down and out-gas at the elevated temperatures required for UHV processing; such outgassing would be destructive of the tube environment. Consequently, the elimination of the need to use organic compounds in these roles is another advantage of this invention.

It is a further goal of this invention to be able to employ commercially available ceramic packages that are designed using standard processes and design rules. This includes making use of standard multi-layer ceramic packages as, for example, are described in Kyocera's “Multilayer Ceramics Design Guidelines”, 1995 CAT/2T9504THA/1244E. Other techniques for the manufacture of ceramic packages exist and may be used in this invention.

Multiple die bond pads are used to secure the semiconductor anode to the underlying substrate. In the preferred embodiment at least three distinct pads are used. The die is secured via brazing. A low melting point, low vapor pressure, malleable material is used for the braze. Indium and alloys thereof are good braze materials. Pads are typically deposited on the semiconductor device in a pattern that matches that of the intended substrate, typically a ceramic package. The following stack of materials has been demonstrated to generate a suitable braze pad:

-   -   SiO_(x)N_(y)˜3000 Angstroms (The thickness and x/y ratio of this         layer are not critical)     -   Chrome—2000 Angstroms     -   Gold—500 Angstroms

An alternate stack of materials has also been demonstrated to generate a suitable braze pad:

-   -   SiO_(x)N_(y)—3000 Angstroms (The thickness and x/y ratio of this         layer are not critical)     -   Titanium—200 Angstroms     -   Platinum—5000 Angstroms     -   Gold—500 Angstroms

The SiO_(x)N_(y) layer acts as an insulator and a secondary barrier layer that is particularly useful when depositing on a silicon substrate. The chrome and platinum layers act as a barrier layer for the braze material. The final gold layer acts as a wetting agent for indium based brazes. This allows organic-free, flux free brazing to be performed with high yield. It should be noted that excessively thick gold layers can interfere with the reliability of the bond. The binary phase diagram reveals that a brittle inter-metallic compound, presumably AuIn₂, is formed between indium and gold when they are allowed to mix in a molten state during the described braze and then solidify. This phase appears as brittle, roughly cubic crystals, in a matrix of relatively pure malleable indium. If the crystal fraction exceeds a critical value, the brazes will no longer be malleable and substrate failure may occur. Gold enters the braze from both the semiconductor braze pads and the package die bond pads. The braze between the semiconductor device and the package is typically designed to be roughly columnar. Consequently, the fraction of gold in the indium braze, assuming a fixed deposition thickness on both surfaces and equilibrium braze conditions, is roughly inversely proportional to both indium mass/unit-area and bond thickness. In practice using standard gold coated Kyocera die bond pads and the described semiconductor bond pads, braze thicknesses below 4 mils have proven to be unreliable, while brazes >=6 mils thick have proven to be quite robust. Optimal semiconductor die positioning performance is obtained when the braze pad diameter is greater than or equal to the braze thickness. Currently, 10 mil or larger pads are used to achieve a 6 mil braze thickness.

This braze approach can be applied in a unique manner that allows high mechanical precision EBAPS detectors to be fabricated. EBAPS sensors are typically sealed via a cold indium seal. This seal must be affected at temperatures of less than that of the melting point of Indium in order to preserve photocathode sensitivity. This invention teaches that a low melting point (less than the melting point of indium), low vapor pressure braze material can be used on the anode of an EBAPS sensor, or any other assembly of similar geometry, in conjunction with an indium cold weld seal. Furthermore, the assembly can be sealed at a temperature intermediate to the melting point of the braze material and that of indium. The seal is made while the indium is in the solid state and the die attach braze material is in the liquid or semi-liquid state. In this manner a spacer can be placed between the photocathode and the anode assembly such that the photocathode-spacer-anode combination press into and cause molten anode braze material to flow as needed so that the anode backed by the braze material adjusts to a position within the housing while maintaining parallelism with the photocathode. The spacer is typically an annular insulator that has an open area overlying the active area of the anode. The spacer may contain gaps or channels to improve the conductance between the cathode active area and the balance of the tubes evacuated volume. The spacer may be physically bonded to the cathode, the anode or both. One method of bonding includes brazing the spacer to the desired tube component. After affecting the cathode to vacuum envelope seal, the assembly is cooled to lock in the relative physical positions of the cathode and anode. Thus this manufacturing approach allows for controlled positioning of the anode relative to the photocathode while at all times maintaining parallelism between the two surfaces.

This invention further teaches that Indium-Tin alloys in the vicinity of 52% In, 48% Sn with a melting point of approximately 118° C. meet the requirements of this approach. Advantages of this approach include low cost reproducible manufacturing techniques, low peak forces between the cathode-spacer-anode assembly during the seal process, better operational qualities, robust physical performance after cooling and excellent thermal conductivity between the anode and the package. The assembly must be handled with care during the period of time that the die braze material is molten. Once the die braze material sets, the assembly becomes very tolerant of shock and vibration. This manufacturing technique also creates a tube without the stresses that have existed in prior art approaches, thereby generating a mechanically robust sensor. It should also be noted that this approach can be used on a wire-bonded assembly. The wire-bonds have sufficient compliance to allow the required compression of the molten die braze material.

This technique is equally beneficial on any gap-sensitive, planar vacuum device. Specific devices that would benefit include EBCCD sensors and MCP containing sensors such as that described in U.S. Pat. No. 6,747,258 B2 (Benz). In the case of Benz, the presence of an insulating film on the output of the MCP allows direct contact to be made between the MCP and the CMOS anode. Consequently, for the purpose of this invention the MCP-CMOS sensor of Benz can be treated like a vacuum photodiode. In other words, if the CMOS anode of Benz were supported as taught in this invention, a spacer lying between the cathode and MCP would press the MCP and anode into the deformable (molten or semi-molten) die bond material as a single unit thereby accurately specifying the spacing of all critical sensor components in a single operation. Without the use of this invention, the use of a cathode-MCP spacer would result in unacceptably high forces between the components during the seal process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic illustration of a semiconductor device showing the location and distribution of bond pads on a bottom surface.

FIG. 2 is a schematic illustration of the mating pattern of bond pads within a ceramic vacuum tube body.

FIG. 3 is a schematic cross section of a malleable braze showing the semiconductor device and its package.

FIG. 4 is a schematic of a cross sectional view of a bonded die in a packaged vacuum tube.

FIG. 5 is a schematic cross section of a bonded die in a vacuum package; an additional spacer has been introduced to specify and set the gap between the cathode and the anode.

FIG. 6A is a schematic depiction of an image sensor, with its die bond material in a molten state, immediately before seal. FIG. 6B shows the sensor immediately after seal.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a semiconductor device 10 suitable for use in the invention. This device is envisioned to be but not limited to an imaging sensor such as an electron bombarded CCD (EBCCD) or an electron bombarded CMOS or electron bombarded active pixel sensor (EBAPS), or an electron sensitive ROIC. In the case of the EBCCD and EBAPS devices, the semiconductor device may lie in a thin layer on the side opposite that shown in FIG. 1. In these devices, the semiconductor device is typically bonded to a support structure of silicon or glass. This facilitates backthinning of the semiconductor device as for example is explained in U.S. Pat. No. 4,687,922 or in pending application Ser. No. 10/795,040 for improved electron bombarded imaging of such devices. In these cases, 10 represents this bonded structure or semiconductor device. U.S. Pat. No. 6,020,646 describes one method of making a UHV compatible integrated circuit die assembly. Items 5 and 9 both represent braze pads of different sizes. Braze pad 5 overlies interconnect trace 13 thereby electrically connecting a bond pad on the opposite side of the die with interconnect braze pad 5. Braze pad 9, is electrically isolated from interconnect traces 13 and interconnect braze pads 5. In the case of a silicon substrate, the pads and interconnects are typically deposited over a SiO_(x)N_(y) layer, ˜3000 Angstroms in thickness. In the case of an EBCCD or EBAPS device mounted on Pyrex, the SiO_(x)N_(y) layers extent may be limited to where the trace 13 overlies the silicon present on the front and side of the device. Electrical traces 13 are typically comprised of a 500 Angstroms thick titanium layer followed by 20,000 Angstroms of aluminum, followed by 500 Angstroms of chrome. Bond pads 5 and 9 are typically comprised of: Chrome—2000 Angstroms and Gold—500 Angstroms. Semiconductor device 1 is approximately one cm square.

Pure indium is the preferred braze material in cases where a solid phase seal is anticipated. The eutectic mix of Indium and Tin is preferred in cases where a mixed phase seal (MPS) will be attempted. During a MPS, the anode braze material is molten while the cathode to vacuum envelope seal material remains solid. Other, materials including silver, aluminum and gallium are useful in conjunction with each other or in conjunction with indium to form low melting point, low vapor pressure malleable braze joints. Other materials common in braze or solder materials such as bismuth, cadmium and lead exhibit somewhat higher vapor pressures and consequentially should be used with great caution in UHV applications.

Braze pad geometry can be varied over a fairly wide latitude. Generally though, there are a few guidelines that have resulted in reliable bonds. First, minimum pad size should be >=the braze thickness. When using indium as the braze material and standard Kyocera pad metallizations, a nominal braze thickness of 5-8 mils is targeted. This is a functionally useful range in that indium volume can be adjusted to compensate for package tolerances. In other words, the braze thickness can be used to shim the gaps to meet manufacturing gap targets thereby allowing package tolerances to be relaxed. This results in a less expensive package. It should be noted that both average gap and parallelism may be shimmed in this manner. The minimum braze pad size is therefore specified by the upper range of the targeted braze thickness. Interconnect pads 5 are approximately 10 mils in diameter. In practice, a minimum pad size of 10 mils diameter has been used with the 5-8 mil target braze thickness. Mixed pad sizes have been used on individual die without any apparent problems. Generally, pad arrays have been symmetrical so as to attempt to balance the TCE induced strain evenly amongst the pads. The pads, 9, are electrically isolated, they primarily serve in a physical and heat transfer role. The pads, 9, are typically larger than the electrical interconnect pads 5. An array of pads, 9, sized in the 50 to 100 mil range appear to work well to locate and transfer heat away from the semiconductor die assembly 10.

The targeted braze thickness of >5 mils has an additional vacuum processing benefit. The larger the gap between the base of the semiconductor die and the package facilitates more effective pumping of these surfaces during the vacuum bake cycle required in UHV tube processing.

Electrical connection to the braze pads is made via a separate metal trace 13. This trace is deposited between the SiO_(x)N_(y) layer and the first pad metal layer. Electrical traces are typically comprised of a 500 Angstrom thick titanium layer followed by 20,000 Angstroms of aluminum, followed by 500 Angstroms of chrome. The electrical traces are typically routed from the bond pad, around the sides of the die to the back bonding surface. When indium is used as the braze material, no wetting of the braze material to the traces is observed, no additional masking layer is required. Alternatively, this same metallization deposition can be used within a generic ceramic package to redistribute the physical locations of bond pads so as to reflect the bond pad layout of a specific die.

Referring now to FIG. 2 the tube body of the preferred embodiment, 17, is described, in detail in U.S. Pat. No. 6,507,147. The disclosure in this patent of a useful package for the tube and the general positioning of parts is hereby incorporated by this reference. This patent does not describe the die and interconnect approach disclosed herein. Although a unitary ceramic body represents the preferred approach, the die and interconnect technique herein described is compatible with more traditional metal/ceramic brazed ultra high vacuum tube assemblies such as described in Publication U.S. 2003/0066951 A1 for an intensified hybrid solid-state sensor. Interconnect pads 21 and die bond pads 25 are generated per standard multilayer ceramic package manufacturing methods as described in Kyocera's “Multilayer Ceramics Design Guidelines”, 1995 CAT/2T9504THA/1244E and similar design guides from other multilayer ceramic supplies. Die bond pads 25 are typically electrically connected together internally and brought out on a single pin from the opposite side of the package. Interconnect pads 21 are individually routed to separate pins on the opposite side of the package. 27 designates a metallized pad.

The preferred shape of the die bond and interconnect pads is round, though non-round pads have been successfully used. The die bond pads 25 are packed fairly densely in order to efficiently transfer heat from the semiconductor device to the package's back wall. In FIG. 2, the outline traced by interconnect pads 21 is approximately 1 cm square, roughly matching the semiconductor die size.

The semiconductor die 10 is assembled with package 17 by placing braze material between each of the mating pads and running the physically stacked parts through a braze cycle. When indium is used as the braze material, the assembly will stick together when the parts are physically aligned and pressed together. No additional alignment or fixturing is required. Once a few of the sights bond, the surface tension of the braze material will both align in X and Y directions and pull the parts together in the Z dimension.

During the braze process an indium preform is positioned over metallized pad 27. This causes the indium to melt and wet to pad 27. This indium layer will subsequently be used to seal the vacuum tube to the photocathode.

FIG. 3 represents an un-scaled schematic cross section of the bonded die including an interconnect braze. In this Figure, semiconductor device 10 is brazed to package 17 via a malleable braze 29. When using the metallization recipes listed for pad 5 and a Kyocera standard interconnect pad metallization for pad 21 (see FIG. 2), the volume of braze material is chosen in order to achieve a braze thickness of at least 4 mils. Layer 33 (see FIG. 4) represents the SiO_(x)N_(y) layer, which is typically approximately 3000 Angstroms thick and serves to electrically isolate interconnect traces. Almost any insulator can be used for this purpose, SiO_(x)N_(y) was chosen because it is easy to deposit with a minimum of pinholes, a minimum of stress and it is easily etched from regions that need to be accessed. Layer 37 represents that portion of the semiconductor device that contains active circuitry and interconnects.

After the sensor has been run through the braze process, it is subjected to a vacuum bake-out and sealed to an activated photocathode 41. The seal is accomplished by pressing photocathode 41 into the indium layer 45 that was previously wet to surface 27. The proximity of photocathode 41 to semiconductor device 1 illustrates the benefit of this approach over one that requires wire bonds off the top surface of 10. Similarly, with standard flatness tolerances on package 17 on the order of 3 mils, the advantage of being able to shim the gap between 10 and 41 by measuring package depth and adjusting the volume of braze material used in braze 29 becomes apparent.

FIG. 4 is a cross-sectional view of a semiconductor die assembly, 10, attached via a low melting temperature braze material, 29, to the surface of a ceramic package 17. The braze is formed between package pad 21 and semiconductor die assembly electrical interconnect pad 5. Electrical interconnect pad 5 is connected to the semiconductor circuit indicated by layer 37 via trace 13. Electrical isolation of pad 5 and trace 13 is assured via SiO_(x)N_(y) layer 33. FIG. 4 is not drawn to scale, the thin films are expanded for clarity.

FIG. 5 represents an un-scaled schematic cross section of the bonded die including an interconnect braze and a spacer 51 between the cathode and anode. In this Figure, semiconductor device 10 is brazed to package 17 via a malleable braze 29 such as In_(.52)Sn_(.48). When using the metallization recipes listed for pad 5 and a Kyocera standard interconnect pad metallization for pad 21 (see FIG. 2), the volume of braze material is chosen in order to achieve a braze thickness of at least 4 mils. Layer 33 (see FIG. 4) represents the SiO_(x)N_(y) layer, which is typically approximately 3000 Angstroms thick and serves to electrically isolate interconnect traces. Almost any insulator can be used for this purpose, SiO_(x)N_(y) was chosen because it is easy to deposit with a minimum of pinholes, a minimum of stress and it is easily etched from regions that need to be accessed. Layer 37 represents that portion of the semiconductor device that contains active circuitry and interconnects.

After the sensor body has been run through the braze process, it is subjected to a vacuum bake-out. After the body has been baked, it is stabilized to a temperature greater than the melting point of the braze material 29 but less than the melting point of the vacuum envelope sealing material 45. The body is then brought into contact with and sealed to an activated photocathode 41. The seal is accomplished by pressing photocathode 41 into the indium layer 45 that was previously wet to surface 27. The sealed tube assembly is then cooled to below the melting point of the braze material 29.

FIG. 6 shows a variant of the invention that uses wire-bonds, 53, to connect the electrical connections of the die to the vacuum package, 17. In this case as shown in FIG. 6A, the spacer, 51, is bonded to the anode, 10, of the sensor during the component assembly process. In 6B, the cathode has been driven into the indium seal ring, 45, to affect a vacuum seal. As depicted in the sketch, contact between the cathode and the anode results in deformation of both the molten die bond material and the wire bonds. It should be noted that although it is not shown, the center of the spacer that would otherwise overlay the active pixels on the photocathode is open so as to allow the passage of photoelectrons.

While there has been shown and discussed what are presently considered a preferred embodiment, it will be obvious to those skilled in the art that various changes and modifications may be made without departing from the scope of this invention and the coverage of the appended claims. 

1. The method of manufacturing a high vacuum tube in which a semiconductor die is bonded onto an inner surface of a package comprising creating multiple bonding pads at a first surface of a die, creating multiple matching bonding pads at the inner surface of the package, said package comprising a different material from said first surface of said die, placing between said sets of bonding pads a die bond material with a melting point of less than about 150° C., aligning the surfaces with said bonding pads together, placing a photocathode into a facing relationship with the second surface of said die, placing a spacer between said photocathode and said second surface of said die, and carrying said photocathode, said spacer, and said die while in a contacting relationship and aligned together through a brazing cycle and then through an ultra high vacuum processing cycle resulting in a sealed vacuum tube.
 2. The method of claim 1 including sealing said tube with a crush seal material and crushing said seal material between package sections while said seal material is in a solid state.
 3. The method of claim 2 including performing said sealing step during said ultra high vacuum processing cycle while elevating the tube body to a temperature of above the melting point of the die bond material but below the melting point of said crush seal material.
 4. The method of claim 2 where the vacuum seal material is Indium and the die bond material is an alloy of Indium and Tin.
 5. The method of claim 3 including sealing said tube while maintaining said tube body at a temperature of between 118° C. and 156° C.
 6. The method of claim 3 including connecting conductive bonding wires between said bonding pads at the inner surface of said package and at said first surface of said die.
 7. The method of claim 6 including bonding said wires between said pads prior to sealing said tube package.
 8. The method of manufacturing a vacuum tube in accordance with claim 2 including performing the step of sealing while the die bond material between said pads is in a molten stage.
 9. An ultra high vacuum tube as an imaging device comprising a semiconductor die, a ceramic housing for the tube, a photocathode mounted within said housing in a facing and parallel relationship with said die, said die being positioned within said housing and having a plurality of electrical connections to said housing by pads on said inner wall of said housing and by matching pads on the die surface, a die bond material between said pads, a spacer between said photocathode and the surface of said die in a facing relationship with said photocathode, and an ultra high vacuum enclosed in said housing.
 10. The ultra high vacuum tube of claim 9 wherein said photocathode is connected to said housing by means of a crushed vacuum seal material.
 11. The ultra high vacuum tube of claim 10 where the vacuum seal material is Indium and the die bond material is an Indium-Tin alloy.
 12. The ultra high vacuum tube of claim 9 wherein the photocathode, the spacer and the anode die assembly are in physical contact within the sealed tube.
 13. An ultra high vacuum tube in accordance with claim 9 in which said spacer comprises a glass material.
 14. An ultra high vacuum tube in accordance with claim 9 in which said spacer is between about 2 and about 12 mils in thickness.
 15. An ultra high vacuum tube in accordance with claim 9 in which conductive wires connect between said wire bond pads.
 16. An ultra high vacuum tube in accordance with claim 9 in which the die bond material is an alloy of Indium and Tin.
 17. An ultra high vacuum tube in accordance with claim 16 in which the die bond material is the binary eutectic of Indium and Tin.
 18. An ultra high vacuum tube in accordance with claim 9 in which the die is an electron sensitive imaging device and said photocathode is positioned to comprise a vacuum closure element.
 19. An ultra high vacuum tube in accordance with claim 18 in which said photocathode and said electron sensitive imaging device are in a facing relationship within said tube so that electrons released by said photocathode impinge directly onto said electron sensitive imaging device.
 20. An ultra high vacuum tube in accordance with claim 18 in which the spacer between said photocathode and said die is about 8 mils thick.
 21. An ultra high vacuum tube in accordance with claim 9 including non-electrically active matching pads on the ceramic housing of said tube and the facing side of said die. 